Russian English
Introduction and history
Research projects
Gallery
Laboratory projects
Publications and theses
Laboratory personnel
Links
Alexander N. Obraztsov

Doctor of science
Head of Laboratory,

Born in 1958 in Moscow, Russia
Graduated from Moscow State University in 1981,
PhD, Moscow State University, 1986

Phone: +7-095-939-4126
Fax: +7-095-939-2988
E-mail: obraz@polly.phys.msu.ru

R&D SUMMARY:

  • researches in physics of semiconductors' surface and interfaces semiconductor-dielectric for A3B5 systems;
  • development of optical diagnostic methods for studies of electronic properties of semiconductor-dielectric and semiconductor-metal interfaces;
  • Raman and photoluminescence studies of semiconductors and dielectrics;
  • development of methods for A3B5 materials structure and surface characterization by Raman spectroscopy;
  • meso- and nano-porous semiconductors study;
  • development of photoacoustical method for characterization of porous semiconductors features and for determination of thermal conductivity of materials including diamond films;
  • CVD growth and study of diamond films;
  • CVD growth and study of carbon nanotubes and thin film nano-carbon materials;
  • development o methods for in-situ diagnostic of CVD process by Raman and Plasma Optical Emission Spectroscopy;
  • study of field emission properties of carbon materials;
  • development of models and mechanisms explaining peculiarities of electron field emission from nano-carbon materials;
  • development of prototypes of vacuum electronic devices using nano-carbon cold cathodes, including prototypes of flat panel displays and lamps.

PROFESSIONAL SKILLS

  • solid state physics including optical and electronic properties, crystallography of semiconductors, dielectrics, thin films, interfaces, surfaces;
  • electronics including quantum electronics, microelectronics, vacuum electronics;
  • lasers, optical spectroscopy including Raman, photo-, cathodo- luminescence, photoacoustics;
  • interaction of laser beams with solids;
  • CVD growth of diamond and other carbon materials;
  • electron field emission, including device application of cold cathodes.

SCIENTIFIC INTERESTS

  • At the current period of time the main field of scientific interest is nano-carbon materials growth, characterization and application in vacuum electronic.
  • It includes experimental and theoretical study of nano-carbon materials fabrication, electron field emission properties, development of vacuum electronic devices based on nano-carbon cold cathodes.
  • The field of interest includes also CVD growth of diamond materials and their application for heat sinks, including CVD growth of diamond films, thermal conductivity measurements.

SCIENTIFIC PROJECTS
At the current time 5 R&D projects are in progress:

  1. Study of CVD growth of nano-carbon materials for application as cold cathodes in vacuum electronics.
    The work is supported from a few sources on base of commercial contracts and collaborative agreements.
  2. Development of light emission devices including lamps, flat panel displays etc. using carbon cold cathodes.
    The work is supported from a few sources on base of commercial contracts and collaborative agreements.
  3. Development of method for CVD growth of diamond films for thermal sink application.
    The work is supported by contract with Ministry of Industry, Science and Technology of Russian Federation.
  4. Fabrication and study of nano-carbon composites.
    The work is supported by INTAS grant.
  5. Non-linear optical properties of nano-carbon materials.
    The work is supported by grant of Academy of Sciences of Finland.

EMPLOYMENT HISTORY:
2002 - to present -Moscow State University, Physics Department, Principal Staff Scientist, Head of Laboratory of Carbon Materials
2000-2002 - Kochi University of Technology (Japan), Department of Electronic and Photonic Systems Engineering, Professor
1995-2002 - Moscow State University, Physics Department, Senior Scientist, Head of Laboratory of Carbon Materials
1992-1995 - Nuclear Physics Inst. at Moscow State University, Microelectronics Department, Senior Scientist, Head of Research Group
1990-1992 - Nuclear Physics Inst. at Moscow State University, Microelectronics Department, Researcher
1986-1990 - Moscow State University, Physics Department, Laboratory of Semiconductor Surfaces, Professor Assistant
1981-1986 - Moscow State University, Physics Department, Laboratory of Semiconductor Surfaces, Young Scientist
1979-1981 - Moscow State University, Physics Department, Laboratory of Non-linear Optics, Laboratory Assistant

EDUCATION:
2001 - Doctor of Sciences in Physics and Mathematics (Dr.Sc) Thesis: "Correlation of structural peculiarities with optical and electro-physical characteristics of semiconductor and dielectric films"
1986 - Candidate of Sciences in Physics and Mathematics (Ph.D.) Thesis: "Optical and photo-electrical properties of oxide layers on GaP and GaAs"
1975-1981 Moscow State University, Faculty of Physics, Department of Quantum Radiophysics, Diploma Specialist in Physics Thesis: "Study of phase transformation in Gd2(MoO4)3 crystal by Spontaneous Parametric Light Scattering method"

PUBLISHED PAPERS:
Total number of scientific publication exceeds 150 titles.
The list of recent selected papers:

  1. A.N. Obraztsov, A.P. Volkov, K.S. Nagovitsyn, K. Nishimura, K. Morisawa, Y. Nakano, A. Hiraki "CVD growth and field emission properties of nanostructured carbon films", J. Phys. D: Appl. Phys. 35(2002)357.
  2. A.N. Obraztsov, A.P. Volkov, A.I. Boronin, S.V. Kosheev, "Defect induced lowering of work function in graphite-like materials", Diamond and Related Materials, 11(2002)813.
  3. A.N. Obraztsov, "Cathodoluminescent light source", PCT Patent PCT/RU 02/00175.
  4. A.N. Obraztsov, I.Yu. Pavlovsky, A.P. Volkov, "Field electron emission in graphite-like films", Technical Physics, 46(2001)1437.
  5. A.N. Obraztsov, A.P. Volkov, A.I. Boronin, S.V. Kosheev, "Rehybridization of the atomic orbitals and electron field emission from nanostructured carbon", JETP, 93(2001)846.
  6. A.N. Obraztsov, A.P. Volkov, I. Pavlovsky, "Field emission from nanostructured carbon films", Diamond and Related Materials, 9(2000)1190.
  7. A.P. Volkov, A.N. Obraztsov, I.Yu. Pavlovsky, A.S. Petrov, V.I. Petrov, I.Yu. Topilski, "Cathodoluminescence of carbon CVD films", Surface Investigation, 15(2000)939.
  8. A.N. Obraztsov, I. Pavlovsky, A.P. Volkov, E.D. Obraztsova, A.L. Chuvilin, V.L. Kuznetsov, "Aligned carbon nanotube films for cold cathode application", J. Vac. Sci. Technol. B, 18(2000)1059.
  9. A.N. Obraztsov, I.Yu. Pavlovsky, A.P. Volkov, A.S. Petrov, V.I. Petrov, E.V. Rakova, V.V. Roddatis, "Electron field emissionand structural properties of carbon CVD films", Diamond and Related Materials, 8(1999)814.
  10. A.N. Obraztsov, A.P. Volkov, I.Yu. Pavlovsky, A.L. Chuvilin, N.A. Rudina, V.L Kuznetsov, "Role of the curvature of atomic layers in electron field emission from graphitic nanostructured carbon, LETP Lett., 69(1999)411.
  11. A.N. Obraztsov, I.Yu. Pavlovsky, A.P. Volkov, "Low-voltage electron emission from CVD graphite films", J. Vac. Sci. Technol. B, 17(1999)674.
  12. A.N. Obraztsov, A.P. Volkov, I.Yu. Pavlovsky, "Mechanism of field emission from carbon materials", 68(1998)59.
  13. A.N. Obraztsov, I.Yu. Pavlovsky, A.P. Volkov, E.V. rakova, S.P. Nagovitsyn, "Electron field emission from CVD diamond films", J. Electrochem. Soc., 145(1998)2572.
  14. A.N. Obraztsov, "Nanostructured film-type carbon material and the method for producing the same", PCT Patent WO1998RU0000447.
  15. A.N. Obraztsov, I.Yu. Pavlovsky, A.P. Volkov, "Field emitter and method for producing the same", PCT Patent WO1998RU0000056.

INTERNATIONAL MEETINGS AND CONFERENCES:

  1. European Conf. On Diamond an Related Materials, 1993, 1994, 1996, 1997, 1999, 2000, 2001, 2002.
  2. MRS,
  3. Electrochemical Soc. Symposium, 1993, 1995, 1997
  4. Int. Vacuum Microelectronics Conf., 1998, 1999, 2002.
  5. Applied Diamond Conf., 1994, 1999.
  6. Int. Conf. On Solid State Devices and Materials, Ykokhama, Japan, 1994.
  7. etc.